Patent · US Active

Photodetector integrated circuit (IC) having a sensor integrated thereon for sensing electromagnetic interference (EMI)

US9385667B2 · kind B2 · utility

3Cited by

7References

24Claims

0Family size

Assignee

Avago Technologies General IP (Singapore) Pte. Ltd. · SG

Inventors

Thomas Lichtenegger · Alteglofsheim, DE
Martin Weigert · Lindlar, DE
Robert Swoboda · Oberwil, CH

Key dates

Filing date	Jun 14, 2013
Grant date	Jul 5, 2016
Priority date	—
Expiry date	Jun 21, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG01J2001/444
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A photodetector integrated circuit (IC) having an electromagnetic interference (EMI) sensor integrated therein is provided for sensing EMI at the photodetector. Integrating the EMI sensor into the photodetector IC ensures that the EMI sensor is in proximity to the photodetector so that any EMI that is sensed is actually EMI to which the photodetector is exposed. The sensed EMI may then be used for a number of reasons, such as to determine the root cause of damage to circuitry of the system, to determine the point in time at which an EMI event occurred, or to trigger a warning when a determination is made that an EMI limit has been reached.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.