Patent · US Active

Semiconductor device and electronic device

US9390766B2 · kind B2 · utility

3Cited by
3References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 13, 2012
Grant dateJul 12, 2016
Priority date
Expiry dateOct 30, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/73265
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

There is a need to provide a semiconductor device and an electronic device capable of easily allowing a bypass capacitor to always improve noise suppression on a signal path in order to transmit a reference potential between chips in different power supply noise states. There is provided a specified signal path that connects a control chip and a memory chip mounted on a mounting substrate and transmits a reference potential generated from the control chip. A bypass capacitor is connected to the specified signal path only at a connecting part where a distance from a reference potential pad of the memory chip to the connecting part along the specified signal path is shorter than a distance from a reference potential pad of the control chip to the connecting part along the specified signal path.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.