Semiconductor device and method for manufacturing semiconductor device
US9390781B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 21, 2014 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Aug 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a transistor formed on a semiconductor substrate, a first insulation film formed above the semiconductor substrate, and first and second capacitors located on the first insulation film. The first capacitor includes a lower electrode, a ferroelectric, and an upper electrode. One of the lower electrode and the upper electrode is connected to an impurity region of the transistor. The second capacitor includes a first electrode, a first dielectric, a second electrode, a second dielectric, and a third electrode. The lower electrode is formed from the same material as the first electrode, the ferroelectric is formed from the same material as the first dielectric, and the upper electrode is formed from the same material as the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.