Transient voltage suppressor and its manufacturing method
US9391058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2014 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Oct 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
A transient voltage suppressor and its manufacturing method are provided, which can easily control voltage withstanding characteristics of a Zener diode by analogizing growth of a buried layer by forming a portion of the buried layer by performing ion implantation on a first epitaxial layer and then forming the other portion of the buried layer while depositing a second epitaxial layer having the same impurity concentration with the first epitaxial layer, and which can improve a current distribution characteristic by forming a doping region in a ring shape to increase a current pass region by increasing a PN junction area of a Zener diode in a small area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.