Nonvolatile semiconductor memory device
US9391087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2014 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Sep 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device includes first and second word line groups, each including a plurality of stacked word lines above a substrate, a first memory string including a first memory column through the first word line group, a second memory column through the second word line group, and a first memory connection portion electrically coupling the first and second memory columns, and a second memory string including a third memory column through the first word line group, a fourth memory column through the second word line group, and a second memory connection portion electrically coupling the third and fourth memory columns. The first memory connection portion is formed in a first layer of the substrate and the second memory connection portion is formed in a second layer of the substrate that is lower than the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.