Semiconductor device and method for manufacturing the same
US9391096B2 · kind B2 · utility
14Cited by
35References
40Claims
0Family size
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Key dates
| Filing date | Jan 14, 2014 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Jan 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
To provide a highly reliable semiconductor device. The semiconductor device includes a first oxide layer over an insulating film; an oxide semiconductor layer over the first oxide layer; a gate insulating film over the oxide semiconductor layer; and a gate electrode over the gate insulating film. The first oxide layer contains indium. The oxide semiconductor layer contains indium and includes a channel formation region. The distance from the interface to the channel formation region is 20 nm or more, preferably 30 nm or more, further preferably 40 nm or more, still further preferably 60 nm or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.