CMOS image sensor unit and method for fabricating the same
US9391115B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2015 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Jun 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A CMOS image sensor unit and a method for fabricating the same are described. The image sensor unit includes a photodiode, a transfer gate, a reset gate, a source follower gate, a floating drain region between the transfer gate and the reset gate, and a PIP capacitor. The lower poly-Si electrode of the PIP capacitor is electrically connected with the floating drain region and the source follower gate to also serve as an interconnect between the floating drain region and the source follower gate. The fabrication method includes forming contact plugs on the floating drain region and the source follower gate, and then forming a PIP capacitor whose lower poly-Si electrode is connected with each contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.