Varactor structure
US9391214B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 2, 2015 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Mar 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.