Method for preparing a thin layer of an absorber made of copper, zinc and tin sulfide(s), annealed thin layer and photovoltaic device thus obtained
US9391231B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2013 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Nov 26, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a thin compact crystallized layer with large grains of an absorber material essentially consisting of Cu, Zn and Sn sulphide(s), preferably CZTS, with less defects and preferably with improved composition homogeneity and/or reduced content of secondary phases, by producing a method for double annealing, in determined atmospheres, of thin layers of particles of a so-called absorber material based on copper, zinc and tin sulphide, preferably on CZTS, deposited on a substrate covered with molybdenum (Mo), said thin annealed absorber layer deposited on said Mo substrate imparting improved photovoltaic performances to a photovoltaic device which comprises them.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.