Light emitting diode
US9391239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2014 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | May 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.