Photovoltaic perovskite material and method of fabrication

US9391287B1 · kind B1 · utility

Assignee

• BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA · US

Inventors

• Jinsong Huang · Lincoln, US
• Qingfeng Dong · Lincoln, US
• Rui Dong · Mission Viejo, US
• Yuchuan Sao · Lincoln, US
• Cheng Bi · Longbeilingcun, CN
• Qi Wang · 安丰镇, CN
• Zhengguo Xiao · Plainsboro, US

Key dates

• Filing date: Dec 19, 2014
• Grant date: Jul 12, 2016
• Expiry date: Dec 19, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

A semiconductor device and a method for fabrication of the semiconductor device are described that include a perovskite layer formed using a solution process with lead iodine and methylammonium halide. In an implementation, a semiconductor device that employs example techniques in accordance with the present disclosure includes a cathode layer; an anode layer; and an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer including an interdiffused and annealed lead iodine (PbI2) film and methylammonium halide (CH3NH3X) film. In implementations, a process for fabricating a continuous-perovskite semiconductor device that employs example techniques in accordance with the present disclosure includes spinning a PbI2 layer onto an ITO-covered glass; spinning an MAI layer onto the PbI2 layer; annealing the PbI2 layer and the MAI layer; spinning a PCBM layer onto a resulting perovskite layer; and depositing an Al layer.