Thin film micromachined gas sensor
US9395324B2 · kind B2 · utility
12Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2010 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Sep 5, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4074
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thin film/MEMS electrochemical gas sensor includes a body having first and second joined subassemblies to form an interior portion of the body, and is composed of a semiconductor material. The body includes at least one opening configured to allow air to pass into the interior portion of the body. A membrane stack is located in the interior of the body, producing an electrical signal that represents a concentration of target gas in the air at the membrane stack. Conductive contacts are configured to provide electrical connection to the membrane stack to access the electrical signal produced by the membrane stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.