Method of adjusting a threshold voltage of a multi-gate structure device
US9396949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2013 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Sep 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/43
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method of adjusting a threshold voltage of a multi-gate structure device, wherein, preparing the multi-gate structure device to be formed to have a channel impurity distribution with high doping on surface and lowly doping inside, where while a threshold voltage is adjusted by using impurity doping, the influences of the Coulomb impurity scattering on the carriers is reduced as much as possible, so that the mobility of the carriers is maintained at a higher level. Firstly, the present solution is able to make a multi-gate device obtain a larger range of a multi-threshold voltage; it is convenient for the various demands of the device in the circuit designing by IC designers. Secondly, in the course of introducing the impurity doping to adjust a threshold voltage, the influences of the Coulomb impurity scattering on the channel carrier are reduced as much as possible, so that the mobility of the charge carriers is maintained at a higher level, and the device is ensured to have a higher drive current. Finally, the present solution is achieved by the process method compatible with a conventional CMOS, and has the potential for a large scale production…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.