Semiconductor device
US9397185B2 · kind B2 · utility
4Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2013 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Dec 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor device according to the present invention has a MIS structure that includes a semiconductor layer, a gate insulating film in contact with the semiconductor layer, and a gate electrode formed on the gate insulating film, and the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%. A semiconductor device is thereby provided with which electron trapping in the gate insulating film can be reduced and shifting of a threshold voltage Vth can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.