CdHgTe photodiodes array

US9397244B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Mollard · Grenoble, FR
• Guillaume Bourgeois · Grenoble, FR
• Gerard Destefanis · Yssingeaux, FR

Key dates

• Filing date: Apr 14, 2015
• Grant date: Jul 19, 2016
• Expiry date: Apr 14, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/148

Abstract

A photodiodes array includes a useful layer made of CdxHg1-xTe; first doped zones each forming a PN junction with a second doped zone surrounding the first doped zones. The array includes regions located between two PN junctions, with a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. A method of making such a photodiodes array includes producing, on the upper face of the useful layer, of a structured layer with at least one through opening, and with a cadmium concentration higher than the cadmium concentration in the useful layer; annealing the useful layer covered by the structured layer, with diffusion of cadmium atoms of the structured layer, from the structured layer to the useful layer; producing at least two PN junctions in the useful layer.