Method of producing an optoelectronic semiconductor chip
US9397280B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2013 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Feb 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0365
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.