Semiconductor laser and method for producing a semiconductor laser comprising a feedback element

US9397480B2 · kind B2 · utility

Assignee

• NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH · DE

Inventors

• Johannes Koeth · Gerbrunn, DE
• Lars NÄHLE · Bad Abbach, DE

Key dates

• Filing date: May 1, 2015
• Grant date: Jul 19, 2016
• Expiry date: May 1, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/176
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Embodiments relate to a semiconductor laser having a multilayer structure including a ridge and two material removal areas adjacent to the ridge on either side, the multilayer structure being arranged on a substrate and a layer expansion plane being defined by a surface of the substrate, the ridge having at least one active region and at least the active region being spatially limited by passages between the ridge and the material removal areas in one dimension of the layer expansion plane, the active region having a layer structure for forming an interband cascade laser.