Dynamically driven deep n-well circuit
US9397651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2010 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Feb 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit can include an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, a circuit node, and a connection element connecting the n-well to the circuit node. The connection element can include a diode having an anode terminal connected to the circuit node and a cathode terminal connected to the n-well, a resistor having a first terminal connected to the circuit node and a second terminal connected to the n-well, a conductor directly connecting the n-well to the circuit node, or a well switch configured to connect the n-well to the circuit node during an enable phase of a switching signal and to electrically float the n-well during a non-enable phase of the switching signal. The diode can include a diode-connected transistor. The circuit node can be configured to receive a predetermined voltage having a magnitude equal to or greater than an upper supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.