Pressure sensor and manufacturing method of the same
US9400224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2014 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Sep 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R1/28
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pressure sensor and a manufacturing method of the same are provided. The pressure sensor includes a substrate, a dielectric oxide layer, a first electrode, a dielectric connection layer, and a second electrode. The dielectric oxide layer is formed on the substrate. The first electrode is formed on the dielectric oxide layer. The dielectric connection layer is formed on the first electrode. The second electrode is formed on the dielectric connection layer. The second electrode comprises a patterned conductive layer and a dielectric layer. The patterned conductive layer has a plurality of holes, and the dielectric layer is formed on the patterned conductive layer and covers the inner walls of the plurality of holes. The first electrode, the dielectric connection layer, and the second electrode define a first chamber between the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.