Method and device for measuring critical dimension of nanostructure
US9400254B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2015 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Mar 26, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/88
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are a method and device for measuring a critical dimension of a nanostructure. The method includes acquiring a reference intensity distribution, in each of a number of spectral bands, of light scattered by at least one reference nanostructure, for each of a number at different positions of the at least one reference nano structure disposed along an optical axis; generating a library of reference intensity distribution arrays based on a number of the reference intensity distributions, determining an intensity distribution of light scattered by a nanostructure under investigation, for each of the number of spectral bands, at each of the number of different positions of the nanostructure under investigation disposed along the optical axis; generating an intensity distribution array by using the determined intensity distributions, and determining information about a critical dimension of the nanostructure under investigation by comparing the intensity distribution array with the library of reference intensity distribution arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.