Magnetic random access memory journal for multi-level cell flash memory
US9400744B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2013 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Jun 6, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F12/0804
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory system comprises a logic block interface operable to receive a write command from a host computer, the write command specifying data and a write destination address in a flash memory device, the flash memory device operable to store data at a complementary address corresponding to the specified write destination address. The system further comprises a journal communicatively coupled to the flash memory device and the logic block interface operable to temporarily store data from the complementary address of the flash memory device, and to provide the stored data in the journal to be restored to the flash memory device at the complementary address in the event of an error occurring while executing the write command.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.