Memory cells with p-type diffusion read-only port
US9401200B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes a bistable element and two p-channel transistors (i.e., first and second p-channel transistors). The bistable element includes a plurality of inverting circuits and at least one data storage node. The bistable element may be formed in a first region on the substrate that is partially formed by a p-type diffusion region and an n-type diffusion region. The first and second p-channel transistors are coupled serially. The first p-channel transistor may also have its gate terminal coupled to the at least one data storage node of the bistable element. A method of manufacturing the memory cell includes forming a bistable element having at least first and second data storage nodes, forming a write-only port of the memory cell over an n-type diffusion region and forming a read-only port of the memory cell over a p-type diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.