Semiconductor device including transistor

US9401398B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Takeru Matsuoka · Tokyo, JP
• Yasuhito Saito · Kasai, JP
• Seiichi Kamiyama

Key dates

• Filing date: Jul 14, 2015
• Grant date: Jul 26, 2016
• Expiry date: Jul 14, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

According to one embodiment, a semiconductor device includes: a first region including: a first semiconductor layer; a first semiconductor region; a second semiconductor region; a third semiconductor region having higher impurity concentration than the first semiconductor region; a first electrode; a second electrode; an insulating film; a third electrode; a fourth electrode, a second region including a pad electrode, and the third region including: the first semiconductor layer; the first semiconductor region; a third semiconductor region; the first electrode; the second electrode; and a first insulating layer.