Ultraviolet light-emitting device with lateral tunnel junctions for hole injection
US9401455B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2015 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Dec 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
Abstract
An ultraviolet light-emitting device with a lateral tunnel junction for hole injection includes a PN tunnel junction structure formed on a p-type layer at one side of an active region. The PN tunnel junction structure includes a p-type structure containing a plurality of alternately laminated p-AlGaN barrier layers and p-AlGaN well layers, and an n-type structure containing a plurality of alternately laminated n-AlGaN barrier layers and n-AlInGaN well layers, with the p-type structure facing the p-type layer. Both the p-type structure and the n-type structure have a plurality of projections extending from their surface. The n-type structure is formed on the p-type structure with the projections of the n-type structure fully filling void portions of the p-type structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.