Specific deep brain stimulation for enhancement of memory

US9403010B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Itzhak Fried · Los Angeles, US
• Nanthia Suthana · Los Angeles, US
• Barbara Knowlton · Los Angeles, US

Key dates

• Filing date: Dec 16, 2011
• Grant date: Aug 2, 2016
• Expiry date: Dec 16, 2031

Classification

• Technology area (CPC A): Human Necessities
• CPC primary: A61N1/3616
• WIPO field: Medical technology
• WIPO sector: Instruments

Abstract

A site-specific deep brain stimulation for enhancement of memory is described. A method of the site-specific deep brain stimulation for enhancement of memory may include implanting intracranial depth electrodes in a patient, wherein the electrodes are placed in right and/or left entorhinal regions, and stimulating the electrodes with current set below an after-discharge threshold. The method may include stimulation at a specific brain site in the medial temporal lobe, stimulation (ODTS) at specific stages of information processing. A system for site specific deep brain stimulation of entorhinal regions during specific stages of information processing is also described.