Dynamic temperature adjustments in spin transfer torque magnetoresistive random-access memory (STT-MRAM)
US9406368B2 · kind B2 · utility
5Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2014 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Jan 21, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49826
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
Systems and methods to manage memory on a spin transfer torque magnetoresistive random-access memory (STT-MRAM) are provided. A particular method of managing memory includes determining a temperature associated with the memory and determining a level of write queue utilization associated with the memory. A write operation may be performed based on the level of write queue utilization and the temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.