Process for forming a ceramic oxide material with a pyrochlore structure having a high dielectric constant and implementation of this process for applications in microelectronics
US9406439B2 · kind B2 · utility
0Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2009 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Jun 26, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.