Semiconductor light emitting device and semiconductor light emitting device package using the same
US9406635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2015 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Apr 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.