Semiconductor light-emitting device
US9406657B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2013 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Jan 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light-emitting device has a substrate, one or more semiconductor light-emitting elements provided on the substrate, and that emit light having a peak wavelength in a 380 nm to 480 nm wavelength region, and a molded member covering the semiconductor light-emitting element, and containing a phosphor that emits visible light by being excited by the emitted light from the semiconductor light-emitting element. The molded member is formed so that index A=H/(s/n) satisfies 0.3≦A≦6, where H is the height [mm] of the molded member from the substrate, s is the square root [mm] of the contact area between the substrate and the molded member, and n is the number of the semiconductor light-emitting elements covered with the molded member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.