FinFET structure and method of manufacturing the same
US9406675B1 · kind B1 · utility
2Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 16, 2015 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Mar 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26506
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for forming the same are provided. The method includes providing a substrate, forming a fin structure extruding from the substrate, forming shallow trench isolations over the substrate, and forming an oxide material over the fin structure. The method further includes forming a carbon-doped amorphous silicon layer or a carbon-doped poly silicon layer over the oxide material, wherein the forming a carbon-doped amorphous silicon layer or a carbon-doped poly silicon layer includes doping carbon in a range of from about 5E19/cm3 to about 1E22/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.