Field-effect transistor

US9406809B2 · kind B2 · utility

Assignee

• FUJIFILM Corporation · JP

Inventors

• Kenichi Umeda · Yokohama, JP
• Takamichi Fujii · Yamakita, JP

Key dates

• Filing date: Sep 12, 2013
• Grant date: Aug 2, 2016
• Expiry date: Sep 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

There is provided a field effect transistor having, on a substrate, at least a gate electrode, a gate insulating film, an active layer mainly containing an oxide semiconductor that contains at least one of In, Ga or Zn, a source electrode, and a drain electrode, the field effect transistor including: a heat diffusion layer, wherein, given that a thermal conductivity of the substrate is Nsub (W/mK), a thermal conductivity of the heat diffusion layer is Nkaku (W/mK), a film thickness of the heat diffusion layer is T (mm), a planar opening ratio of the heat diffusion layer is R (0≦R≦1), and S=T×R, the thermal conductivity Nsub of the substrate satisfies the condition Nsub<1.8, and the thermal conductivity Nkaku of the heat diffusion layer satisfies the conditions Nkaku>3.0×S^(−0.97×e^(−1.2×Nsub)) and Nkaku≧Nsub.