Method of manufacturing a photovoltaic device

US9406829B2 · kind B2 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Pratima Addepalli · Saline, US
• Benyamin Buller · Cupertino, US
• Markus Gloeckler · Perrysburg, US
• Akhlesh Gupta · Sylvania, US
• David Hwang · Perrysburg, US
• Andrei Los · Perrysburg, US
• Rick C. Powell · Ann Arbor, US
• Rui Shao · Dublin, US
• Gang Xiong · Beaverton, US
• Ming Lun Yu · Fremont, US
• San Yu · Perrysburg, US
• Zhibo Zhao · Ann Arbor, US

Key dates

• Filing date: Jun 27, 2014
• Grant date: Aug 2, 2016
• Expiry date: Jun 27, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.