Sputtering device and method of forming layer using the same
US9410234B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Mar 26, 2015 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Mar 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3447
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a sputtering device and a method of forming a layer using the same.The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.