Method for forming monolayer graphene-boron nitride heterostructures
US9410243B2 · kind B2 · utility
2Cited by
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19Claims
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Key dates
| Filing date | Aug 6, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Oct 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.