Photo-masks for lithography
US9411222B2 · kind B2 · utility
0Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | Apr 1, 2015 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Apr 1, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K2201/067
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photo-mask for use in extreme ultraviolet (EUV) lithography, in which the photo-mask has low coefficient of thermal expansion and high specific stiffness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.