Memory device with multiple voltage generators
US9412429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4091
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes multiple voltage generators. The memory device includes a first voltage generator for generating a first internal voltage based on a first power supply voltage, and a second voltage generator for generating a second internal voltage based on a second power supply voltage that is lower than the first power supply voltage. The first internal voltage is used as a driving voltage of a bit line sense amplifier in a core block including a memory cell array. The second internal voltage that is lower than the first internal voltage is used as a driving voltage of a peripheral circuit block other than the core block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.