Multilevel resistive information storage and retrieval
US9412446B1 · kind B1 · utility
4Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Dec 5, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.