Manufacturing method for semiconductor device
US9412599B2 · kind B2 · utility
4Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate oxide film is formed in a region having a MOSFET on a semiconductor substrate formed therein, and a first polysilicon film serving as a gate electrode of the MOSFET is further formed. Thereafter, a charge storage three-layer film is formed by opening a region having a MONOS type FET formed therein, exposing a semiconductor surface of the semiconductor substrate, and sequentially depositing a first potential barrier film, a charge storage film, and a second potential barrier film. In this case, before the charge storage three-layer film is formed, an anti-oxidation film is formed on the first polysilicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.