Method of manufacturing thin film transistor and method of manufacturing display substrate having the same
US9412771B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Jul 8, 2015 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Jul 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.