Low-temperature fabrication of nanomaterial-derived metal composite thin films
US9412852B2 · kind B2 · utility
2Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Jan 26, 2015 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Jan 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are new methods of fabricating nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.