Semiconductor device
US9412877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Feb 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
A transistor or the like having excellent electrical characteristics is provided. A semiconductor device includes a gate electrode; a gate insulating film in contact with the gate electrode; and a multilayer film which is in contact with the gate insulating film and includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer in the order from a side farthest from the gate insulating film. The first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer each contain indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The first oxide semiconductor layer has a thickness greater than or equal to 20 nm and less than or equal to 200 nm. The third oxide semiconductor layer has a thickness greater than or equal to 0.3 nm and less than 10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.