Method of manufacturing photoelectric device
US9412895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.