Semiconductor light emitting device
US9412903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2015 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Jan 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
Abstract
A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.