Wafer level light-emitting diode array
US9412922B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Aug 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A wafer level light-emitting diode (LED) array includes: a growth substrate; a plurality of LEDs arranged over the substrate, each including a first semiconductor layer, an activation layer, and a second semiconductor layer; a plurality of upper electrodes formed from a common material and electrically connected to the first semiconductor layers of the corresponding LEDs; and first and second pads arranged over the upper electrodes. The LEDs are connected in series by the upper electrodes, the first pad is electrically connected to an input LED from among the LEDs connected in series, and the second pad is electrically connected to an output LED from among the LEDs connected in series. Accordingly, a flip chip-type LED array can be provided which can be driven with a high voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.