Patent · US Active

Formation of a thermopile sensor utilizing CMOS fabrication techniques

US9412927B2 · kind B2 · utility

2Cited by

3References

19Claims

0Family size

Assignee

Maxim Integrated Products, Inc. · US

Inventors

Arvin Emadi · San Jose, US
Stanley Barnett · San Francisco, US

Key dates

Filing date	Dec 17, 2014
Grant date	Aug 9, 2016
Priority date	—
Expiry date	Dec 17, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10N19/101
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.