Resistive switching element and use thereof
US9412940B2 · kind B2 · utility
22Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2013 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Jul 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A bipolar resistive switching device (RSM device, FIG. 35) comprises an electrically conductive bottom electrode (BE, FIG. 35); a stack of transition metal oxides layers (RSM, FIG. 35), a number of transition metal oxide layers (RSO, FIG. 35) being equal or greater than 2, the stack comprising: at least one MOx layer (RSOA, FIG. 35), at least one oxygen gettering layer NOy (RSOB, FIG. 35). The resistive switching device further comprises an electrically conductive top electrode (TE, FIG. 35).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.