Patent · US Active

Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component

US9412971B2 · kind B2 · utility

1Cited by
4References
17Claims
0Family size

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Inventor

Key dates

Filing dateJul 5, 2012
Grant dateAug 9, 2016
Priority date
Expiry dateNov 17, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/549
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An encapsulation structure for an optoelectronic component may include: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and including a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.