Hybrid waveguide lasers and methods for fabricating hybrid waveguide lasers
US9413139B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 1, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Sep 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.