Patent · US Active

Hybrid waveguide lasers and methods for fabricating hybrid waveguide lasers

US9413139B2 · kind B2 · utility

5Cited by
2References
20Claims
0Family size

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Key dates

Filing dateJul 1, 2014
Grant dateAug 9, 2016
Priority date
Expiry dateSep 15, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.