RF power device
US9413308B2 · kind B2 · utility
0Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Jun 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In RF power transistors, the current distribution along edges of the transistor die may be uneven leading to a loss in efficiency and in the output power obtained, resulting in degradation in performance. When multiple parallel dies are placed in a package, distribution effects along the vertical dimension of the dies are more pronounced. A RF power device (600) for amplifying RF signals is disclosed which modifies the impedance of a portion of the respective one of the input lead and the output lead and redistributes the current flow at an edge of the transistor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.