Rapid reduction of sodium occupancy in type II silicon clathrate by chemical etching
US9416013B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Feb 2, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Feb 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/8556
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention relates to a method to produce a type II silicon clathrate, a method to produce a type I clathrate, and a method to decrease sodium in silicon clathrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.